| 摘要 |
PURPOSE:To unify an oscillation axis mode of a semiconductor light emitting device and to reduce the threshold value of the device by providing a groove having periodic irregularity on the side face formed on a semiconductor substrate, a clad layer and an active layer formed in the groove, thereby readily adding DFB, DBR structures. CONSTITUTION:A p type InP semiconductor layer 2 is formed by epitaxial growing method or a gas phase diffusing method on an n type InP semiconductor substrate 1, and then a dioxidized silicon film 3 is formed. The film 3 is then patterned, thereby forming a striped hole 3A. A photoresit film is formed on the overall surface, and pattern exposed by the interference of laser light, thereby forming a periodic fine strip pattern 4. With the pattern 4 as a mask the film 3 is etched, and the pattern 4 used as a mask is removed. With the film 3 as a mask the layer 2 and the substrate 1 are etched to form grooves 5. Then, an n type InP semiconductor layer 6, an InGaAsP active layer 7, a p type InP semiconductor layer 8, and a p type InGaAsP semiconductor layer 9 are sequentially grown, and an irregularity is periodically formed longitudinally on the side face of the layer 7. |
