| 摘要 |
PURPOSE:To make it possible to write without developing silicon powder or protrusion that becomes an obstacle to wafer process by forming an covering oxide film on the whole surface of a wafer and making anisotropic etching advance by using etching liquid to the extent that visible steps are formed. CONSTITUTION:A covering oxide film 9 is grown on a wafer 1 by chemical vapor phase growth method or thermal oxidation. Next, a resist film is formed on the whole surface by painting and patterning that corresponds to desired numbering is applied to the film to open a window 10 in the covering oxide film 9. Then, etching is made on the wafer 1 by the ordinary ammonia boring to form a groove 11 with depth of 8-10mum. In the ordinary etching in the wafer process it is about 1mum and it can not be seen, but the steps given by the deep groove are visible and they make it easy to recognize wafers in the following processes, and contribute to high yield in the manufacture of semiconductors. |
