| 摘要 |
PURPOSE:To remove extraneous matter adhering on the side wall of a pattern positively in a short time by treating an Al or Al alloy film formed onto a semiconductor wafer through a reactive ion etching method to obtain the wiring pattern, incinerating extraneous matter through exposure to O2 plasma, and immersing extraneous matter in an etching fluid mainly comprising phosphoric acid. CONSTITUTION:The Al or Al alloy film is formed to the whole surface of the semiconductor wafer 10 in which polycrystalline Si wiring 13 and SiO2 films 12, 14 are formed onto a semiconductor substrate 11. A mask of a photo-resist 16 is formed onto the Al or Al alloy film and Al wiring 16 is obtained through treatment by a reactive ion etching method, but extraneous matter 17 mainly comprising Al, Cl, C, etc. is generated to the side surface of the wiring 16 at that time. Accordingly, the wafer 10 is exposed to O2 plasma to remove the resist 16 while extraneous matter 17 is incinerated in order to remove extraneous matter, and is immersed in the Al etching liquid mainly comprising phosphoric acid in a short time, and removed. |
