| 摘要 |
PURPOSE:To keep contact resistance between a semiconductor region and a wiring layer to constant low value at all times by forming an Al metallic layer containing Si into a contact hole bored to a SiO2 film through a self-alignment method by resist-lift-off technique and extending and forming a metallic layer similarly containing Si onto the SiO2 film while being brought into contact with said metallic layer. CONSTITUTION:An N<+> type region 22 is formed to a P type Si substrate 21 through the implantation of P ions and succeeding heat treatment, and the whole surface containing the region 22 is coated with the SiO2 film 23. A resist mask layer 25 with an opening corresponding to the region 22 is formed onto the film 23, and the contact hole 26 is formed to the film 23 through selective etching to expose one part of the region 22. The whole surface containing the contact hole is coated with the Al layer 27 containing Si, the layer 27 is left only in the hole 26, other layers 27 are removed together with the mask layer 25, and the Al layer 28 similarly containing Si is extended and applied onto the film 23 while being brought into contact with the Al layer 27 remaining in the hole 26. The unnecessary section is removed, and the wiring layer 29 being in contact with the layer 27 is obtained. |
