| 摘要 |
PURPOSE:To enable to laminate stably when mesa type chips are to be formed regardless of swelling of passivation films at the circumferential part of a pellet by a method wherein protruding parts are provided on the antiparallel face with the etched face for formation of junction as to have the area smaller than the area of the upper electrode side on the surface. CONSTITUTION:A P type diffusion region is formed in an N type silicon substrate from the face on one side according to the diffusion method, and an N<+> type diffusion region is formed from the face on another side to form a diffusion wafer having a P-N-N<+> layer. Then SiO2 films at the mesa parts and an etch down region are etched to be removed, and the exposed Si face is etched. Then, a deep mesa groove for formation of junction is formed by etching. After wax is removed, the exposed junction parts are protected with the passivation films. After the SiO2 films at the unnecessary parts are removed for formation of electrodes, the electrodes are formed, and the wafer is divided into individual chips according to dicing, laser scribing, etc. |
