| 摘要 |
PURPOSE:To prevent breakage caused by thermal strain and obtain a protective film having excellent function, by a method wherein the protective film comprising AlxIn1-xAs (x=0-1) is formed on a compound semiconductor layer of III- IVfamily and heat-treated. CONSTITUTION:On N<+>-InP (100) substrate 21, N-InP buffer layer 22, N-In1-uGau As1-vPv light absorbing layer 23, N-InP multiplication layer 24, N<->-InP layer 25 and Al0.48In0.52As layer 26 are grown in sequence to form continuous liquid phase. Ion implantation of Be and thermal diffusion of Cd are performed selectively on the Al0.48In0.52As layer 26 formed in such manner, thereby a guard ring 27 and P type region 28 to form P-N junction are formed. Si3N4 CVD film 29 is used as a mask for the selective ion implantation and thermal diffusion and the Al0.48In0.52As layer 26 including the film 29 remains and siO2 non-reflective coating film 30 is applied to cadmium diffusion region, i.e. a light receiving surface and AuZn electrode 31 is installed. Crack is not formed in the N<->-InP layer 25 and an excellent light-receiving semiconductor device is manufactured in good yield. |
