| 摘要 |
PURPOSE:To prevent the erroneous operation of a semiconductor device due to parasitic MOS effect and outcoming noise, static induction or the like while raising the integration of the device by interposing a conductor layer which is biased at a stationary voltage at least part between a wiring layer and a thin insulating film. CONSTITUTION:A thin polycrystalline silicon layer 8 which is conductive and has an impurity added, for example, as a shielding film 8 for preventing the static charging via a thin insulating film 5 is formed on the surface of a P type region corresponding to the drain and source of a parasitic MOS transistor. This layer 8 is formed to include at least the portion through which metal wirings 7a pass. The surface of the layer 8 is oxidized, thereby covering a thin dioxidized silicon film 9, a window is partly opened, and the stationary voltages applied via metal wirings 7b to the film 8. The stationary voltage may be appplied to the film 8 directly form insular regions 2a, 2b or the like. In this manner, even if conventional metal wirings 7a are disposed, a parasitic MOS transistor may not be absolutely operated due to the presence of the film 8. |
