发明名称 |
Method to fabricate stud structure for self-aligned metallization |
摘要 |
A self-aligned metal process is described which achieves self-aligned metal silicon contacts and micron-to-submicron contact-to-contact and metal-to-metal spacing by use of the pattern of dielectric material having a thickness in the order of a micron or less. The pattern of recessed oxide isolation to device area is also self-aligned by this process. The process results in substantially planar integrated circuit structure. The process is applicable to either a bipolar integrated circuit either bipolar or MOS field effect transistor integrated circuits.
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申请公布号 |
US4424621(A) |
申请公布日期 |
1984.01.10 |
申请号 |
US19810335894 |
申请日期 |
1981.12.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABBAS, SHAKIR A.;MAGDO, INGRID E. |
分类号 |
H01L21/76;H01L21/033;H01L21/28;H01L21/3205;H01L21/331;H01L21/336;H01L21/768;H01L23/485;H01L29/73;H01L29/78;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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