| 摘要 |
PURPOSE:To obtain the semiconductor device whereon no change in carrier density is brought into the interior of a substrate and also the fluctuation of specific resistance can be prevented by a method wherein a heat treatment is performed on the semiconductor substrate in the inert gas atmosphere such as hydrogen gas or nitrogen gas containing hydrogen gas and the like. CONSTITUTION:After a heat treatment, as the first process, has been performed at 700 deg.C for 24hr in a nitrogen atmosphere on the silicon substrate formed by performing a CZ method, another heat treatnent as the second process is performed at 1,050 deg.C for three hours in the same nitrogen atmohphere, and then as the third process, a heat treatment is performed at 400 deg.C for ten minutes in an atmsophere containing the nitrogen gas of 5% of hydrogen gas and 95% of nitrogen gas in volume percentage. The first process above-mentioned is performed for the purpose of forming a deffective nuclear on the silicon substrate, and the second process is performed in orde to form a diffused zone by outdiffusing oxygen located on the surface of the substrate and, at the same time, to grow a defective nuclear. Through these procedures, the diffused zone is formed on the working region of the substrate after the second process has been completed, and the donor incidentally generated when the above diffused zone is formed disappears in the third process, thereby enabling to effectively prevent the fluctuations of specific resistance in the working region. |
