SOLID-STATE IMAGING DEVICE

摘要

: A solid-state imaging device is disclosed having a semiconductor integrated circuit in which a plurality of switching elements, for selecting positions of picture elements, and scanners for turning "on" and "off" the switching elements in time sequence, are disposed on an identical substrate. A photoconductive film is disposed on the integrated circuit and is connected to one end of each of the switching elements. A light-transmitting electrode is disposed on the photoconductive film. The breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein charge carriers attendant upon the incidence of light is made smaller than the breakdown voltage between the storing first impurity region of each switching element and a second impurity region thereof which forms a signal leading-out portion.