| 摘要 |
PURPOSE:To obtain miniature electrode window which contributes to miniaturization of semiconductor device and realization of high integration density by providing a larger window than the desired one on an insulating layer and providing a new insulating film at the side wall of window. CONSTITUTION:An oxide film 2 is buried in a P type Si substrate 1 and a polysilicon gate electrode 4 is formed on a gate oxide film 3. After providing source and drain by implanting As ion, SiO2 6 and PSG 7 are stacked and annealed. Next, a resist mask 8 providing a window larger than the desired dimension is provided and window is opened on the films 7, 6 by the reactive ion etching. The mask 8 is removed, the surface is covered sufficiently with SiO2 9 by the ion plating method, the film 9 is left only at the side wall of window by the reactive ion etching using the CF4+H2 gas and a super miniature electrode window is formed with good yield. Thereafter, an N channel MOS device can be completed with attachment of Al alloy film 10. According to this structure, a super miniature electrode window can be formed with good yield, making much contribution to completion of a super miniature IC. |
