| 摘要 |
PURPOSE:To obtain excellent element isolation characteristic and element characteristic by forming the stripe or grid type element isolation insulating film at the bottom part of recess formed in the predetermined element forming region of semiconductor substrate. CONSTITUTION:An SiO2 film 22 is formed on the surface of an Si substrate 21 and a recess part 24 is also formed with a resist pattern 23 used as the mask. Next, an SiO2 film 25 for element isolation is formed on the surface. Then, stripe or grid type SiO2 film pattern is formed at the bottom of recess part using a resist pattern 26 as the mask. After removing the pattern 26, silicon Si 27 adding impurity in the conductivity type opposing to that of the substrate is formed deeper than the recess 24 on the entire part of substrate. Then, a fluid substance film 28 is applied to the entire part in order to make flat the surface. The layer 27 is buried in flat in the recess 24 by uniformly etching the film 28 and film 27. After removing the exposed film 22, the layer 27 is single-crystallized. At this time, the n-channel MOSFETQn is formed on the layer 27 while the p-channel MOSFETQp on the substrate region adjacent thereto. |
