| 摘要 |
PURPOSE:To obtain a semiconductor element in which adhesiveness with an oxide film or a CVD film of metallic wiring is improved and electrical characteristics do not degrade by constructing a means executing annealing treatment of a decompression type treating furnace receiving a semiconductor substrate, a means decompressing the inside of the furnace, a heating means and a means injecting a plural kinds of gases. CONSTITUTION:A decompression monitor 14 is set up to the decompression type treating furnace 11 communicated with a vacuum pump 13 as the decompression means, and the state of decompression by the pump 13 is adjusted so as to be kept constant. A jig 16 to which a large number of the semiconductor substrates 15a, 15b, etc. are errected is received into the furnace 11, and the outer circumference of the furnace 11 is surrounded by the resist heater 17. The nozzle rows 18a, 18b, etc. are each fitted to the upper section and lower section of the inside of the furnace 11, and an atmospheric gas divided by a manifold 20 is ejected through transfer pipes 19 from the nozzles. Opening and closing valves 21 in numbers corresponding to the kinds of the gases and flowmeters 22 are set up to the transfer pipes 19, and the gas of N2 or H2 or the like is poured. Accordingly, a hydroxide corrosion between a metallic layer and the oxide film is prevented. |
