发明名称 |
Semiconductor memory device |
摘要 |
An EEPROM utilizing a tunneling electron for writing and/or erasing, has charge pump circuits for pumping charge onto selected column and row lines up to a high voltage. In each of the charge pump circuits, a transistor is provided for intercepting clock pulses applied to a capacitor in each of the charge pump circuits connected to unselected column and row lines.
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申请公布号 |
US4601020(A) |
申请公布日期 |
1986.07.15 |
申请号 |
US19830566321 |
申请日期 |
1983.12.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
ARAKAWA, HIDEKI;KAWASHIMA, HIROMI |
分类号 |
G11C17/00;G11C5/14;G11C16/06;G11C16/30;G11C16/32;(IPC1-7):G11C11/40 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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