| 摘要 |
PURPOSE:To obtain easily an oxide single crystal in the form of a <=1mm. thin film or thick film in a large area with less defects, by making a crystalline oxide amorphous, and recrystallizing the same successively from the end part under a local temp. gradient. CONSTITUTION:A crystalline oxide consisting of a single phase or a solid soln. is made amorphous, whereafter the amorphous oxide is recrystallized successively from the end part under a local temp. gradient. A magnetic material of the oxide, conductive material, semiconductor material, insulating material, etc. are used in addition to, for example, a ferrodielectric material, for the above-described crystalline oxide. Among these materials to be used as the ferroelectric substance, lead titanate, barium titanate, magnesium titanate, lead zirconate, sodium niobate, etc are exemplified. The method for making the crystalline oxide amorphous is divided largely to a quick cooling method for liquid which solidifies liquid by quick cooling and a vapor deposition method which grows the material by vapor deposition on a substrate material. |
