| 摘要 |
<p>PURPOSE:To reduce a sudden temperature rise of a body functioning as a heat sink in case of gate turn-ON, and to increase di/dt resistance in response to the rise by setting the body up on a thyristor base body between a gate electrode and one main electrode fitted adjacent to the gate electrode. CONSTITUTION:When gate currents ig from the gate electrode 7 flow, turn-ON currents I are generated concentrically near a gate. Consequently, heat is generated in the gate region. The region corresponds to a section between the gate electrode 7 and a cathode electrode 6, and there is no body absorbing the generation of heat in conventional thyristors. As a result, a material having no large effect on gate characteristics such as an insulator 8 of excellent thermal conduction is bonded or compression-bonded with the body section to give the body section heat sink action, thus inhibiting an abnormal temperature rise of the section. Accordingly, di/dt resistance can be increased. When the temperature rise is inhibited by using a heat pipe, the method is more effective.</p> |
