| 摘要 |
PURPOSE:To obtain the novel available semiconductor laser element, which eliminates an effect of re-incident light, gives relationship between injected currents and an optical output excellent linearity and prevents the increase of noises, by widening the spectral width of a uniaxial mode. CONSTITUTION:A current stopping layer 2 consisting of N-GaAlAs is deposited on a P-GaAs substrate 1, a V-shaped groove reaching the GaAs substrate 1 is formed while penetrating the current stopping layer 2, and a P-GaAlAs clad layer 3, an N or P-GaAlAs active layer 4, and an N-GaAlAs clad layer 5 and an N-GaAs contact layer 6 are laminated in succession, thus constituting double- hetero junction type internal stripe structure. An ohmic N-side electrode in Au- Ge-Ni is formed onto the contact layer 6, and an ohmic P-side electrode 8 in Au- Zn is formed to the back of the GaAs substrate 1, thus forming the laser element. An adverse effect resulting from the re-incidence of return light can be inhibited by setting the resonant length of a resonator for the laser operation of the active layer 4 within a range of approximately 50-200mum. |
