摘要 |
PURPOSE:To ensure selective control of bubbles by means of a common control conductor, by forming >=2 kinds of transmission lines of different levels of reluctance force to one magnetic bubble chip and actuating selectively the magnetic bubbles of the transmission lines. CONSTITUTION:As shown in the figure, the right half of minor loops m1-mn are set at normal reluctance force Hc I along with the left half set at higher reluctance force HcII respectively (Hc I <HcII). The number of bits can be changed per one page in response to applications by changing the level of the driving magnetic field. For instance, if a large capacity memory is used, the driving magnetic field is reduced to use only the right half region of small reluctance force in case only half or so of the capacity is used. Then the driving magnetic field is increased when the memory capacity is insufficient. At the same time, the left half minor loop is also driven. Thus it is possible to use all minor loops. |