| 摘要 |
PURPOSE:To obtain a negative type resist capable of forming a fine pattern by dry development without causing swelling and shrinkage by incorporating a polymer, an azido compound, and a silicon compound. CONSTITUTION:A negative type resist capable of forming a fine pattern by dry development without causing swelling and shrinkage is obtd. by incorporating 50-89pts.wt. polymer such as polydiallyl orthophthalate, 1-10pts.wt. azido compound such as 4,4'-diazidochalcone, and 10-40pts.wt. silicon compound represented by the formula (where X is phenyl, methyl, biphenyl, phenylamino, phenoxy, benzyl or the like; Y is H, OH, azido, vinyl, phenoxy, phenyl, biphenyl or the like; and Z is phenyl, OH, benzyl, phenoxy, biphenyl or the like), e.g. triphenylvinylsilane. Since wet development is not required, the problem of treatment of waste liquor is not caused at all. |
