| 摘要 |
PURPOSE:To enable the pattern formation of the accuracy to several mum without changing characteristics by a method wherein a pattern of organic photo resist is formed on a substrate or a patterned substrate, next an oxide thin film is vapor-deposited, thereafter the organic photo resist is removed by combustion and evaporation, and thus the pattern of the oxide thin film is formed. CONSTITUTION:The pattern is formed by using normal phenol organic photo resist, and thereafter an insulation film (e.g. Al2O3) is deposited on the substrate 1 with the resist pattern 2 by a vacuum deposition method at a substrate temperature less than approx. 300 deg.C, the deposition temperature for the organic photo resist in vacuum. Afterwards, it is kept in an atmospheric furnace at 450 deg.C in oxygen for an hour or more, and then the resist 2 is removed by combustion and evaporation, resulting in the formation of the pattern. |
