| 摘要 |
PURPOSE:To eliminate the need for an impurity diffusion process for obtaining p-n junctions, to increase radiant power outputs from each light-emitting region in a wafer and to enable fining and a high degree of integration by using p-n junction sections among island regions by a second epitaxial layer isolated by isolation regions and a first epitaxial layer as light-emitting sections. CONSTITUTION:The semiconductor wafer 23 formed is coated with an insulating film 24. The insulating film 24 is photoetched so as to function as masks covering sections, which must function as the light-emitting regions of the n type second epitaxial layer 22, and insulating films 24a, 24a... are formed. Zinc is diffused to the semiconductor wafer 23 while using the insulating films 24a, 24a... as the masks, and p type isolation regions 25 reaching the p type first epitaxial layer 21 are formed to the second epitaxial layer 22. The n type second epitaxial layer 22 is divided into the n type island regions 26a, 26b... by the p type isolation regions 25, and these regions from the p-n junctions together with the first epitaxial layer 21 and function as the light-emitting regions of a light- emitting diode. |
