发明名称 PLANAR SEMICONDUCTOR ELEMENT
摘要 Planar semiconductor component which has a substrate of one conduction type, and a contact-connected zone of opposite conductivity type embedded in the surface of the substrate in planar fashion and having a part thereof emerging to the surface. It also has a control electrode covering that part of the contact-connected contacted zone which emerges to the surface, an insulating layer on the surface, an edge electrode seated on the insulating layer at the edge of the substrate and electrically connected to the substrate, and at least one protective ring zone of the opposite conductivity type positioned between the edge of the substrate and the contact-connected zone and embedded in planar fashion in the surface. The ring zone includes at least one conducting layer completely covering a part of the substrate emerging to the surface between the protective ring zone and the contacted zone, wherein the conducting layer is electrically insulated from the emerging part of the substrate, and electrically contacted by one of the contact-connected protective ring zones embedded in planar fashion in the substrate surface.
申请公布号 JPS592368(A) 申请公布日期 1984.01.07
申请号 JP19830093297 申请日期 1983.05.26
申请人 SIEMENS SCHUCKERTWERKE AG 发明人 KURISUTEIINE FUERINGAA
分类号 H01L29/41;H01L21/331;H01L29/06;H01L29/40;H01L29/73;H01L29/78;H01L29/861 主分类号 H01L29/41
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