| 摘要 |
The present invention relates to a process for forming semiconductor films on electrically conductive substrates such as mercury Hg from the group IIB AW 200 - number of electrons 59 with the combination of other groups from the Periodic Table. It should be noted that films of ternary compounds and, likewise of compounds containing four elements and even five cannot only be prepared on the cathode when it is incorporated in solution. The semiconductor films obtained by the electrolytic process according to the invention are semiconductors of n.p. type and are formed on the cathode like amorphous or crystalline films.
|
