| 摘要 |
PURPOSE:To form an Al film pattern by a method wherein the whole surface of the semiconductor substrate, whereon an Al film is coated, is dipped in an etching solution, the Al film coated on an insulating film is left, and the Al film directly coated on the semiconductor substrate is removed. CONSTITUTION:An Al film 3 is formed in deposition on the semiconductor substrate 1 whereon an insulating film 2 is partially coated, and the substrate 1 is dipped in an etching solution. Even when the Al film 3 coated on the substrate 1 is removed by etching, the Al film 3 coated on the insulating film 2 is etched in the approximate film thickness of 1,000Angstrom and the Al film 3 in the thickness of 9,000Angstrom or thereabout is left. In other words, the etching speed of the Al film 3 coated on the substrate 1 is approximately 10 times faster than that of the Al film 3 on the insulating film 2. |
