发明名称 |
Three-dimensional semiconductor device. |
摘要 |
<p>At least one layer of insulator film (61-63) and single-crystal film (71-73) are alternately stacked and deposited on a surface of a semiconductor substrate (50), and an impurity-doped region (104-113) formed in each semiconductor film (71-73) is used as a gate, source or drain of a MOS transistor.</p><p>Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.</p> |
申请公布号 |
EP0097375(A1) |
申请公布日期 |
1984.01.04 |
申请号 |
EP19830106114 |
申请日期 |
1983.06.22 |
申请人 |
HITACHI, LTD. |
发明人 |
MIYAO, MASANOBU;OHKURA, MAKOTO;TAKEMOTO, IWAO;WARABISAKO, TERUNORI;MUKAI, KIICHIRO;HARUTA, RYO;KIMURA, SHINICHIRO;TOKUYAMA, TAKASHI |
分类号 |
H01L27/00;H01L21/762;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L29/78;H01L29/786;(IPC1-7):01L27/08 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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