| 摘要 |
PURPOSE:To prevent the crosstalk between interconnections in elements of a semiconductor device from occuring by a method wherein an impurity added layer is provided immediately below an interconnection channel region to be connected to a power supply. CONSTITUTION:An impurity added layer 20 is formed on the surface of a substrate 2 immediately below an interconnection channel region 16 to fix the potential of layer 20 by a power supply Vcc or Vss. A part of layer 20 is protruded sideways to be communicated with a source S2 of an active region 14 for fixing to the ground potential. In such a constitution, the N<+>type layer 20 though increasing the capacity between substrates 2 for interconnections 10, reversely decreases the capacity between the interconnections 10 so that any crosstalk between adjoining interconnections due to higher integration may be prevented from occuring.
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