| 摘要 |
A semiconductor memory device has memory cells, each including an emitter region formed in a base region as a bit line, a barrier layer formed in a hole formed in the oxide layer to be in contact the emitter region, a high resistance layer formed thereon, and a metal wiring layer as a word line in contact with the high resistance layer. By applying a voltage between the bit line and the word line, the metal wiring layer melts the part where both these lines cross, punches through the high resistance layer, and reaches the barrier layer, thus short-circuiting both these lines and accomplishing writing.
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