| 摘要 |
PURPOSE:To implement flat and uniform element isolation without a recess, a gap and the like, by oxidizing a semiconductor layer, a part of which remains at the side of a step part. CONSTITUTION:An oxidation preventing film 14 and a semiconductor layer 15 are sequentially formed on the entire surface of a semiconductor substrate 11 having a step part 12. A mask layer 16 is formed on the entire surface. Patterning is performed, and the mask layer 16 is made to remain on the downstream side of the step part 12. By using the remaining mask layer 16, a part of a semiconductor layer 15a on the side of the step part and a semiconductor layer 15c on the upstream side of the step part are selectively etched. The remaining mask layer 16 is removed. The semiconductor layer 15b remaining on the downstream side of the step part is oxidized. Thus, a flat and uniform element isolation without a recess, a gap and the like can be obtained.
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