发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive the improvement in a high-frequency gain by reducing a heat resistance of a semiconductor device by fixing a semiconductor chip to a projection of an island consisting of a metal of good heat conductivity such as copper and further connecting a grounding electrode of the semiconductor chip to said projection through a metallic thin wire. CONSTITUTION:A projection 3A is formed on an island part 3 consisting of a metal such as copper and a semiconductor chip 6 is fixed to this projection 3A through a fixing material such as AuSn. a grounding electrode on the semiconductor chip 6 is connected with the projection 3A through a metallic thin wire 5 consisting of gold etc. Furthermore, the semiconductor chip 6 is sealed hermetically by the island part 3 and the insulating container 1 through a sealing material 2. Because the semiconductor chip 6 is fixed to the projection 3A made of gold, the heat dissipation from the back side of the semiconductor chip 6 increases. Also, as the grounding electrode on the semiconductor chip is connected with the projection 3A through the metallic thin wire, the parasitic capacity and inductance become small.
申请公布号 JPS62188248(A) 申请公布日期 1987.08.17
申请号 JP19860030080 申请日期 1986.02.13
申请人 NEC CORP 发明人 HIKINO TETSUYA
分类号 H01L23/04;H01L21/60;H01L23/02;H01L23/66 主分类号 H01L23/04
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