ISOTYPIC HETERO JUNCTION PHOTOELECTRIC POWER CONVERSION ELEMENT

摘要

PURPOSE:To produce the photoelectric power conversion elements with high electric power conversion efficiency by a method wherein forbidden bands of two semiconductor regions are not overlapped with each other on an energy level at a junction. CONSTITUTION:As to the first semiconductor I with wide band gap and the second semiconductor II with narrow band gap, respective materials with forbidden bands B2 and B4 not overlapped with each other at a junction are selected. Through these procedures, minor carries photoexcited on the surface of the second semiconductor II with narrow band gap are transmitted to the first semiconductor I in arrow A direction through a tunnel between the bands to be externally led-out as numeraous carrier current.