发明名称 SEMICONDUCTOR DEVICE INCLUDING STATIC INDUCTION THYRISTOR
摘要 PURPOSE:To enable the conduction and interruption of current to be controlled by means of light by a method wherein the resistance of a photosensitive semiconductor element in a conducting state at the time of light irradiation is selected to be much lower than a gate resistance. CONSTITUTION:The figure furnishes an example of a photosensitive conductor element D inserted between a gate and a source in parallel therewith. When the element D is not radiated with light, the gate of an Si thyristor Q is impressed with -Vg to be interrupted. But when it is irradiated with light and brought into a conducting state, the Si thyristor Q is changed-over to the conducting state since the potential of gate becomes almost equal to that of a source. Resultantly, the resistance of the element D in the conducting state is selected to be much lower than the gate resistance Rg.
申请公布号 JPS62188271(A) 申请公布日期 1987.08.17
申请号 JP19870022903 申请日期 1987.02.03
申请人 SEMICONDUCTOR RES FOUND 发明人 NISHIZAWA JUNICHI
分类号 H01L29/80;H01L29/74;H03K17/73;H03K17/732 主分类号 H01L29/80
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