| 发明名称 |
Process for selectively etching silicon |
| 摘要 |
A process is provided for selectively etching silicon by means of a plasma etching composition wherein an etching target is connected to a radio frequency voltage and a source of silicon and oxygen is provided with the plasma etching composition in order to minimize etching of a masking composition.
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| 申请公布号 |
US4422897(A) |
申请公布日期 |
1983.12.27 |
| 申请号 |
US19820382050 |
申请日期 |
1982.05.25 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
HORWITZ, CHRISTOPHER M. |
| 分类号 |
H01L21/3065;(IPC1-7):H01L21/30;B44C1/22;B05D5/12;C03C15/00 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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