| 发明名称 |
Semiconductor memory device |
| 摘要 |
A semiconductor EPROM device which comprises a plurality of floating gate type memory cell transistors and in which the threshold potential of the memory cell transistors is measured by changing the potential of a second power supply terminal to which is originally connected a high potential used for programming the EPROM device.
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| 申请公布号 |
US4423492(A) |
申请公布日期 |
1983.12.27 |
| 申请号 |
US19810329939 |
申请日期 |
1981.12.11 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
YOSHIDA, MASANOBU |
| 分类号 |
H01L27/112;G11C17/00;G11C29/00;G11C29/12;G11C29/50;H01L21/8246;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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