| 摘要 |
PURPOSE:To contrive to enhance alpha-rays resisting strength of the semiconductor memory by a method wherein a bias voltage is applied to a buried layer inside of a semiconductor directly under a memory cell to attract out accumulated electrons. CONSTITUTION:An n type layer 9 is buried in the p type substrate 1 directly under a capacitor electrode 3 and a transfer electrode 5, the buried layer is led out to a region other than the memory region by an n type layer 17 and an n<+> type layer 18, an Al electrode 19 is fixed thereto, and the n type layer 9 is biased through an electric power source 20. When alpha-rays 15 are injected to the substrate 1 through the memory cell, electrons of a large number are generated in the substrate 1. A broad depletion layer 21 is generated in the forming layer to attract electrons in the buried layer 9, while the buried layer is held at fixed electric potential by the electric power source 20, and an electric potential barrier is not formed. Accordingly the dynamic MOS memory having high electron attracting faculty, and having remarkably high alpha-rays resisting strength as compared with usual can be obtained. |
