| 摘要 |
PURPOSE:GaP layers are formed on the base of GaP single crystal containing specific amounts of elements as impurities in addition to the dopants to produce a single crystal base in which the phase transition in the base does not propagate to the epitaxial single crystal layers. CONSTITUTION:In the process for production of a base of gallium phosphide single crystal by epitaxial growth of gallium phosphide layers on a base of gallium phosphide single crystal, elements other than the dopants are added as impurities so that the amounts total 20-100ppm. As dopants for GaP, are cited Zn, Te, Se, S, N, and O, and the other elements are cited as the impurities. Especially, when the starting base contains more than 10ppm of Si, more than 1ppm of B, more than 3ppm of alkali metal, more than 0.2ppm of alkaline earth metal, and the total of more than 20ppm of other impurities except the dopants, the epitaxial single crystal layers increases its light emission efficiency more than 1.8 times that of the conventional one. |
