发明名称 METHOD FOR ETCHING TIN OXIDE FILM
摘要 PURPOSE:To generate nascent hydrogen perpetually and vigorously by etching a tin oxide film using an etching liq. contg. an Ni-base starting material. CONSTITUTION:When tin oxide is etched in a patterning stage to manufacture a driving electrode for a display medium such as a liq. crystal panel, an Ni-base material such as nickel chloride or nickel sulfate is added to an etching liq. For example, nickel chloride is added to an etching liq. consisting of hydrochloric acid and zinc powder, and etching is carried out. Gasified hydrogen molecules are adsorbed on Ni before adsorption on the surfaces of the SnO2 film and Zn powder, so SnO2 contacts always with Zn and HCl, and the reaction can be continued, improving the yield and productivity.
申请公布号 JPS58224171(A) 申请公布日期 1983.12.26
申请号 JP19820107335 申请日期 1982.06.22
申请人 DAINI SEIKOSHA KK 发明人 NAGATSUKA TOSHIYOSHI;MOTOJIMA ISAMU;SATOU KENICHI
分类号 G03F7/00;C09K13/04;C23F1/30;G09F9/00;G09F9/30;H01B5/14;H01L21/308;H01L31/18;H05K3/06 主分类号 G03F7/00
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