| 摘要 |
<p>PURPOSE:In the synthesis of a compound semiconductor crystal by the direct synthesis process, the compound semiconductor crystal having a specific composition can be prepared in high efficiency without causing the contamination of the furnace, by using an air-tight crucible lid furnished with a connecting capillary, and heating and melting the raw materials in the crucible under a specific pressure. CONSTITUTION:An air-tight lid 2 furnished with a connecting capillary 3 is used as a lid of the crucible 1. The raw material of Ga 8, the raw material of As 9, and a liquid sealant 10 (e.g. B2O3) covering said raw materials are put into the crucible 1, closed with the lid 2, and inserted into the furnace (the number 6 is heater, 7 is heat-insulating material, and 5 is pedestal). The growth of compound semiconductor crystal is carried out by conventional process by applying high pressure to the furnace, thereby applying pressure higher than the vapor pressure of the element (As) having the highest vapor pressure among the constituent elements at its melting point to the content of the furnace through said connecting capillary.</p> |
