| 摘要 |
PURPOSE:To perform the load/unload bubbles between an ion in plantation transfer pattern part and a ''Permalloy'' pattern part and replication smoothly by composing a minor loop only of the ion injection transfer pattern and a major line part only of the ''Permalloy'' pattern part. CONSTITUTION:The minor loop 10 of a non-ion inplantation area is formed on magnetic bubble crystal 12 by ion implantation method, a U-shaped conductor pattern 11 is formed on the minor loop 10 through a spacer 14 and the major line 16 consisting of permaloy patterns 7, 8, 8', 9, 9' is formed on the pattern 11 through a spacer 14. In addition, a pickax ''Permalloy'' pattern 7 is opposed to the cusp of the minor loop 10 and the conductor pattern 11 is arranged on a line connecting both the pattern 7 and the minor loop 10. Said constitution makes it possible to execute gate functions such as replication and swapping smoothly and transmit bubbles from the ion implantation part to the ''Permalloy'' part or in its reverse direction without using a specified loop or gate. |
