| 摘要 |
PURPOSE:To contrive to improve the characteristics of a photoelectric conversion device by a method wherein B(P) is doped into a donor (acceptor) type clear conductive film on a clear electrode by plasma treatment, and then intrinsic or substantially intrinsic non-single crystals are laminated thereupon, resulting in the property modification of the layer in the neighborhood of the clear electrode into P(N) type. CONSTITUTION:When Sn2O3 12 doped with 10wt% or less of Sb2O3 is vapor-deposited on ITO11 on a glass plate 1, B is doped by plasma treatment at the substrate temperature of 400 deg.C or less, and successively the intrinsic or substantially intrinsic non-single crystal layer is superposed by plasma glow discharge method, B turns an acceptor by reverse diffusion, and Sn does not turn a donor, accordingly the recombination current between the holes of this P layer and the film 12 is promoted. Conversely, when the same manner is performed by doping P into the In2O3 doped with 10% or less of Sn2O3, P turns a donor by reverse diffusion, but In does not turn an acceptor, and accordingly the recombination between electrons and the film 12 is promoted. Thus, a P-I or N-I junction is formed in the non-single crystal layer, and then the open voltage in a photoelectric conversion device can be increased. |
