| 摘要 |
PURPOSE:To eliminate the masking process simplifying the manufacturing processes by a method wherein the junction between N type active layer and N type semiconductor layers holding the former layer are formed stepwise while P type diffusion layer is formed on the region from the surface of one N type semiconductor layer to the active layer at the stepped part of the junction forming P-N junction at the active layer in the lateral direction. CONSTITUTION:The junction between an active layer 24, an N-GaAlAs layer 23 and another N-GaAlAs layer 25 is formed stepwise while a stepped part 28 is formed on the halfway of the junction and P type diffusion layer 29 is formed on the hole implantation electrode 26 side. The P type diffusion layer 29 diffuses zinc from the overall surface of the N-GaAlAs layer 25 to form itself in the region reaching the active layer 24 in the stepped part 28 from the surface while the boundary between the P type inversion region and the N type is in parallel with the surface of the N-GaAlAs layer 25. Consequently, P-N junction 30 with specified width may be formed at the stepped part 28 on the active layer 24. |
