| 摘要 |
PURPOSE:To easily contrive reduction in wiring resistance by a method wherein a silicon nitride layer and the second silicon oxide film are provided between a gate oxide film and a high melting point electrode, thereby enabling to use a high melting point metal as a gate electrode without giving an instable state on a channel forming voltage. CONSTITUTION:A silicon nitride layer 5 prevents a movable ion from moving to the side of a gate oxide film 3. A second silicon oxide film 6 is grown by performing a high-pressure oxidation on the surface of the silicon nitride layer 5. Besides, the second silicon oxide film 6 performs the function wherein the passage of carrier of hole or electron is obstructed. A CVD method is performed in order to suppress the entrance of an impurity ion into a molybdenum electrode 7. The movable ion contained in the molybdenum electrode is blocked by the silicon nitride layer 5 when a heat treatment is performed, and there is no possibility for the movable ion to enter into a gate oxide film 3. Also, the carrier of hole, electron and the like is completely blocked by the second silicon oxide film 6, and no charge is performed between the gate oxide film 3 and the silicon nitride layer 5. |
