| 摘要 |
PURPOSE:To prevent the formation of an intermediate reaction product, and to form a crystal of excellent crystallinity and surface state by setting up a parting plate inhibiting mixing until at least two kinds of raw material compounds reach a growth layer. CONSTITUTION:Triethyl indium (TEI) and triethyl gallium (TEG) diluted by hydrogen are introduced gas-supply pipe 8 and arsine AsH2 phosphine PH3 diluted similarly by hydrogen form a gas supply pipe 9, and these substances are injected in the opposite direction partitioned by the parting plate 13 for example, from a jet 15 formed to a nozzle 14 constituted by a material such as quartz. Consequently, TEI or TEG and AsH2 or PH3 do no mix directly because they are isolated by the parting plate 13. Accordingly, the intermediate reaction product is not formed, and the crystal of excellent crystallinity and surface state can be formed extending over a range of a wide composition. |
