发明名称 PREPARATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce a remaining amount of released gas generated from resin pellet within the internal space of package and prevent deterioration of sealing due to increase of internal gas pressure by hermetically sealing the space between the sealed housing body and sealing cap through thermal processing at the first temperature region which is the gelation and hardening temperature of resin for covering semiconductor element. CONSTITUTION:Those where a thermosetting resin pellet 5 and a cap are respectively placed within or on a package base material are put into a furnace for hermetical sealing in order to execute gelation and hardening of resin and the hermetically sealing process. First, at the first temperature region (a), a resin pellet 5 shows fused gelation and covers the entire part of surface of semiconductor element 1 and thereafter, it is hardened. At this time, the gas generated during fused gelation of resin pellet 5 leaks to the outside of package from a minute space formed by the contact part between the hermetically sealed fused layer 7 and the cap 6 of the unsealed pckage base material 4 and therefore a little amount of gas remains within said package. In succession, a heat processing is carried out at the second temperature region (b). A semiconductor device is hermetically sealed by the thermal processing at the same region.
申请公布号 JPS58222547(A) 申请公布日期 1983.12.24
申请号 JP19820105942 申请日期 1982.06.18
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KONDOU SHIYUUJI;SHIRAGASAWA TSUYOSHI
分类号 H01L23/02;H01L21/56 主分类号 H01L23/02
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