| 摘要 |
<p>PURPOSE:To speed up the access time, by inserting a series circuit comprising a diode and a resistor to a bit line of a read only memory for switching the bit line from selection to nonselection in high speed. CONSTITUTION:A memory cell MC connected to the word line W and the bit line B1 is provided, and the diode D1 blocking the write current at data write is connected in series with the bit line B1, and the diode D2 and the resistor R2 are connected in series to decrease the time constant. The diode D2 and the resistor R2 are connected in parallel with the resistor R1. Thus, the supply current is increased with the operation of the diode D2, for attaining quick charging, and the delay time in transiting the bit line from the selection to the nonselection is quickened, allowing to speed up the access time.</p> |
