| 摘要 |
PURPOSE:To obtain a buried hetero-structural semiconductor laser of good reproducibility of crystal groth and high yield of manufacture by a method wherein a V-groove composed of a semiconductor multilayer film containing an active layer is formed on a semiconductor wafer. CONSTITUTION:The semiconductor wafer consists of the first conductivity type semiconductor substrate 201, second conductivity type semiconductor block layer 202, and first conductivity type semiconductor block layer 203. The groove 205 which is deeper than the layer 202 and has a V-shape section is formed in this semiconductor wafer. This groove 205 is composed of the semiconductor multilayer film cntaining the active layer 207, and is covered with the second conductivity type semiconductor buried layer 209 over the entire surface. The active layer 207 is sandwiched by semiconductor layers 206 and 208 of energy gaps larger than that of the layer, and the layer surface is in parallel with groove side surfaces. Thus, the buried hetero-structural semiconductor laser of good reproducibility of crystal growth and high yield of manufacture can be obtained. |
