| 摘要 |
PURPOSE:To improve crystallinity, and to enhance the characteristics of the semiconductor film formed at a low temperature by using two or more of laser beams in laser annealing in a semiconductor manufacturing process. CONSTITUTION:Laser intensity in the case when laser beams are irradiated while the center of laser beams, the distribution of energy intensity thereof is shown in a distribution curve 1, is separated only by (d) is shown in a synthetic curve 2. Distribution is overlapped by bringing a distance of irradiation (d) to 1cm or less in laser beams. Regarding the branch or synthesis of laser beams, one laser luminous flux 21 is separated into two by a beam splitter 22, and reflected by reflector plates such as aluminum plates 23, and beams are synthesized on a substrate 24. The method is more stable than the case of the utilization of a change of form of laser beams, crystallization progresses to the periphery from the center of an irradiating section, and laser annealing of excellent crystallinity can be executed stably. |
