| 摘要 |
PURPOSE:To improve covering characteristic of protecting insulating layer on wiring conductive layer and make almost flat the surface of protecting insulating layer by burying wiring conductive layer at the surface of insulating layer so that the surface of insulating layer and that of wiring conductive layer become almost flat. CONSTITUTION:The plasma etching is carried out to the surface of resit layer 10 in order to remove the area other than that within the recesses 9a, 9b, 9c of resist film 10, thereby the surface of conductive layer 8 is exposed, and the resist layers 10a, 10b, 10c within the recesses 9a, 9b, 9c of resist layer 10 are respectively left on the surface of conductive layer 8 in the recesses 7a, 7b, 7c, by utilizing that the thickness at the area within the recesses 9a, 9b, 9c of the resist layer 10 is thicker than the area other than the recesses 9a, 9b, 9c. Next, the selective etching is executed to the conductive layer 8 with the resist layers 10a, 10b, 10c used as the mask, thereby the conductive layer 8 just under the resist layer 10a, 10b, 10c is left respectively within the recesses 7a, 7b, 7c of insulating layer 2. Thereby the wiring condutive layers 8a, 8b, 8c are formed and the other part of conductive layer 8 is removed from the surface of insulating layer 2. |
