| 摘要 |
PURPOSE:To prepare a copper alloy for semiconductor equipment improved in thermal and electric conductivities, mechanical strength, etc., by incorporating specific percentage of Ni, Co, Cr, and Si to Cu. CONSTITUTION:The copper alloy consisting of, by weight, 1-4% Ni or Co (X), 1-3% Cr (Y), 0.8(X/5.2)+0.5(Y/5.6)-1.2(X/5.2+Y/5.6)% of Si (Z), and the balance C is melted and cast into an ingot. This ingot is hot-worked at >=about 650 deg.C and then cooled rapidly without delay down to at lest about 350 deg.C at a cooling rate of >=about 10 deg.C/sec by means of water cooling, etc., which is cold-worked and then heat-treated at 400-600 deg.C to undergo finishing, so that copper alloy for semiconductor equipment can be obtained. This alloy has a strength of about 45-70kg/mm<2> and an electric conductivity of about 35-60% IACS and is excellent in solderability, plating suitability, adhesive strength of scales, and corrosion resistance.
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