| 摘要 |
PURPOSE:To accelerate the operation of a semiconductor device by partly forming a connector of a polycrystalline Si electrode with a single crystal element forming region in an Si COS structure to reduce a junction capacity, to increase an active region and to improve the dimensional accuracy. CONSTITUTION:High density base regions 25' are formed on the left side portion of a base region 15, on front and back portions perpendicular to the paper, i.e., on the three of four surfaces of the periphery of an active region. This bipolar transistor is insulated by forming an oxide film 204 on part of a connector for connecting a base region 25 with a base leading polycrystalline Si electrode 27 to reduce the ratio of the region 25' to the active region of the transistor. Thus, the ratio of the active base region to the area of the emitter can be effectively increased, and a junction capacity between the base and the collector can be reduced.
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