| 摘要 |
PURPOSE:To eliminate warping of wafer by providing the inside face of a furnace for continuous heat treatment of semiconductor substrates with many reaction gas outlets that are provided oblique to the direction in which loaded substrates move, and transferring one by one from a cassette for supply provided at one end of the furnace body a semiconductor wafer as it is being lifted, and U-turning the wafer to a cassette for wafer storage and giving heat treatment to the wafer while it is transferred. CONSTITUTION:At one end of a furnace body 7 made of transparent quartz and surrounded by many infra-red lamps 8 a wafer supply cassette 11 and a wafer receiving cassette 12 are provided in parallel, and gas tubes 7-1 that corresponds to them are provided in parallel at the bottom of the furnace. Those gas tubes are pierced to have many jet holes 7-2 that are oblique to the direction of movement of each wafer 5. A reaction gas is jetted out from those holes to move the wafer floating. After this, the wafer is U-turned by a rotating plate 10 that is provided at the other end of the furnace body 7. During the movement of the wafer, heat treatment is applied thereto, and it is returned to the cassette 12. With this arrangement, the wafer is heat treated on its front and rear faces, thereby eliminating warping. |
